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APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 1-12 all ratings @ t j = 25c unless otherwise specified these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 10/11/12 ; 7/8 trench & field stop igbt3 q2, q3: v ces = 600v ; i c = 75a @ tc = 80c coolmos? q1, q4: v dss = 600v ; i d = 70a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? q2, q3 trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? q1, q4 coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated - very rugged ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter coolmos & trench + field stop igbt3 power module downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 2-12 q1 & q4 absolute maximum ratings (per coolmos?) q1 & q4 electrical characteristics (per coolmos?) symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 350 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 600 a r ds(on) drain C source on resistance v gs = 10v, i d = 47.5a 24 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 5ma 2.1 3 3.9 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 200 na q1 & q4 dynamic characteristics (per coolmos?) symbol characteristic test conditions min typ max unit c iss input capacitance 14.4 c oss output capacitance v gs = 0v ; v ds = 25v f = 1mhz 17 nf q g total gate charge 300 q gs gate C source charge 68 q gd gate C drain charge v gs = 10v v bus = 300v i d = 95a 102 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 100 t f fall time inductive switching (125c) v gs = 10v v bus = 400v i d = 95a r g = 2.5 ? 45 ns e on turn-on switching energy 1350 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 400v i d = 95a ; r g = 2.5 ? 1040 j e on turn-on switching energy 2200 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 400v i d = 95a ; r g = 2.5 ? 1270 j r thjc junction to case thermal resistance 0.27 c/w symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 95 i d continuous drain current t c = 80c 70 i dm pulsed drain current 260 a v gs gate - source voltage 20 v r dson drain - source on resistance 24 m ? p d maximum power dissipation t c = 25c 462 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 e as single pulse avalanche energy 1900 mj downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 3-12 q2 & q3 absolute maximum ratings (per igbt) symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 100 i c continuous collector current t c = 80c 75 i cm pulsed collector current t c = 25c 140 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 250 w rbsoa reverse bias safe operating area t j = 150c 150a @ 550v q2 & q3 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 600 na q2 & q3 dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance 4620 c oes output capacitance 300 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 140 pf q g gate charge v ge =15v, i c =75a v ce =300v 0.8 c t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 75a r g = 4.7 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 75a r g = 4.7 ? 60 ns t j = 25c 0.35 e on turn-on switching energy t j = 150c 0.6 mj t j = 25c 2.2 e off turn-off switching energy v ge = 15v v bus = 300v i c = 75a r g = 4.7 ? t j = 150c 2.6 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 380 a r thjc junction to case thermal resistance 0.60 c/w downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 4-12 cr2 & cr3 diode ratings and characteristics (per device) symbol characteristic test conditions min typ max unit v f diode + tranzorb forward voltage i f = 10a 10 v r thjc junction to case thermal resistance 8 c/w cr5 & cr6 diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v i rm maximum reverse leakage current v r =600v 25 a i f dc forward current tc = 80c 30 a i f = 30a 1.8 2.2 i f = 60a 2.2 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc e rr reverse recovery energy i f = 30a v r = 400v di/dt =1000a/s t j = 125c 0.6 mj r thjc junction to case thermal resistance 1.2 c/w cr7 & cr8 diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v 100 a i f dc forward current tc = 80c 30 a i f = 30a 2.6 3.1 i f = 60a 3.2 v f diode forward voltage i f = 30a t j = 125c 1.8 v t j = 25c 300 t rr reverse recovery time t j = 125c 380 ns t j = 25c 360 q rr reverse recovery charge i f = 30a v r = 800v di/dt =200a/s t j = 125c 1700 nc e rr reverse recovery energy i f = 30a v r = 800v di/dt =1000a/s t j = 125c 1.6 mj r thjc junction to case thermal resistance 1.2 c/w downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 5-12 temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175* t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g * tjmax = 150c for q1 & q4 sp3 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 6-12 q2 & q3 typical performance curve hard switching 0 15 30 45 60 75 0 20406080100 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =4.7 ? t j =150c t c =85c operating frequency vs collector current output characteristics (v ge =15v) t j =25c t j =25c t j =150c 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 25 50 75 100 125 150 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =150c 0 25 50 75 100 125 150 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 1 2 3 4 5 0 25 50 75 100 125 150 i c (a) e (mj) v ce = 300v v ge = 15v r g = 4.7 ? t j = 150c eon eoff 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 75a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 7-12 q1 & q4 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 80 160 240 320 400 480 560 640 720 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =25c t j =125c 0 40 80 120 160 200 240 280 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 0 40 80 120 160 200 240 280 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 95a 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 8-12 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 95a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 1000000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 0 40 80 120 160 200 240 280 320 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =95a t j =25c downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 9-12 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 20 40 60 80 100 120 140 0 20406080100120140160 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =2.5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 i d , drain current (a) t r and t f (ns) v ds =400v r g =2.5 ? t j =125c l=100h switching energy vs current e on e off 0 1 2 3 4 0 20 40 60 80 100 120 140 160 i d , drain current (a) switching energy (mj) v ds =400v r g =2.5 ? t j =125c l=100h e on e off 0 1 2 3 4 5 0 5 10 15 20 25 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =95a t j =125c l=100h hard switching 0 50 100 150 200 250 300 10 20 30 40 50 60 70 80 90 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =2.5 ? t j =125c t =75c downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 10 - 12 cr5 & cr6 typical performance curve forward characteristic of diode t j =25c t j =125c 0 20 40 60 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v f (v) i f (a) energy losses vs collector current 0 0.25 0.5 0.75 1 0 2 04 06 08 0 i c (a) e (mj) v ce = 400v v ge = 15v r g = 2.5 ? t j = 125c 0 0.25 0.5 0.75 1 024681 0 gate resistance (ohms) e (mj) v ce = 400v v ge =15v i c = 30a t j = 125c switching energy losses vs gate resistance maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 11 - 12 cr7 & cr8 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 20 40 60 80 0.0 1.0 2.0 3.0 4.0 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage energy losses vs collector current 0 0.5 1 1.5 2 2.5 0 2 04 06 08 0 i c (a) e (mj) v ce = 800v v ge = 15v r g = 5 ? t j = 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 01 02 03 0 gate resistance (ohms) e (mj) switching energy losses vs gate resistance v ce = 800v v ge =15v i c = 30a t j = 125c downloaded from: http:///
APTCV60TLM24T3G APTCV60TLM24T3G C rev 2 october, 2012 www.microsemi.com 12 - 12 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damage s and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///

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